Obtain a Quote for Bae Systems Controls Inc Part Number PG39000-01 Now

Part Number:  PG39000-01
Alternate P/N:  PG3900001
Manufacturer:  Bae Systems Controls Inc
NIIN:  01-374-2040
Item Name :  microcircuit memory
CAGE Code:  07690
INC Code :  41015
Country:  USA
NCB Code:  01

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Disclaimer: This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/customer-terms-and-conditions/ . All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without 6RE77 is void.


NSN Information for Part Number PG39000-01 with NSN 5962-01-374-2040, 5962013742040

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-374-2040

Item PartTypeName:

MICROCIRCUIT,MEMORY

59620137420400NB
CIICHCCESDPMICCriticalityENAC
7BA0
Part NumberISCRNVCRNCCHCCMSDSSADC
ROM/PROM515

Characteristics Data of NSN 5962-01-374-2040, 5962013742040

MRCCriteriaCharacteristic
MEMORYCTQXCURRENT RATING PER CHARACTERISTIC16 00 MILLIAMPERES REVERSE CURRENT DC NOMINAL
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM TOTAL SUPPLY AND 7 0 VOLTS MAXIMUM TOTAL SUPPLY AND-2 0 VOLTS MINIMUM ABSOLUTE INPUT AND 7 0 VOLTS MAXIMUM ABSOLUTE INPUT AND-0 5 VOLTS MINIMUM ABSOLUTE OUTPUT AND 7 0 VOLTS MAXIMUM ABSOLUTE OUTPUT
MEMORYCZESHYBRID TECHNOLOGY TYPEMONOLITHIC
MEMORYTESTTEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI
MEMORYCBBLFEATURES PROVIDEDPROGRAMMED AND ULTRAVIOLET ERASABLE AND WRESET
MEMORYCQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORYCQZPINPUT CIRCUIT PATTERN22 INPUT
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYZZZXDEPARTURE FROM CITED DESIGNATORALTERED BY PROGRAMMING & MARKING
MEMORYAEHXMAXIMUM POWER DISSIPATION RATING1 2 WATTS
MEMORYAFJQSTORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORYAGAVEND ITEM IDENTIFICATION5840013274413 EI FSCM 07690
MEMORYCQSJINCLOSURE MATERIALCERAMIC
MEMORYAFGAOPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORYCQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORYCTFTCASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510
MEMORYCXCYPART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUIT MEMORY22-INPUT 10-OUTPUT AND-OR-LOGIC ARRAY
MEMORYCZEQTIME RATING PER CHACTERISTIC20 00 NANOSECONDS AF OUTPUT MEGAWATTS
MEMORYCZERMEMORY DEVICE TYPEPAL
MEMORYTTQYTERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT
MEMORYZZZKSPECIFICATIONSTANDARD DATA67268-5962-8753904LA GOVERNMENT STANDARD AND 07690-639167-01 MANUFACTURERS SOURCE CONTROL

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